Part Number
|
DP3N10 |
Manufacturer
|
Developer Microelectronics |
Description
|
N-Channel MOSFET |
Published
|
Dec 17, 2020 |
Detailed Description
|
DP3N10
N-Channel 100V(D.S)MOSFT
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) Max.
ID (A)a
0.126 at VGS = 10 V
3.1
1...
|
Datasheet
|
DP3N10
|
Overview
DP3N10
N-Channel 100V(D.
S)MOSFT
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) Max.
ID (A)a
0.
126 at VGS = 10 V
3.
1
100
0.
134 at VGS = 6 V
2.
9
0.
139 at VGS = 4.
5 V
2.
6
Qg (Typ.
) 2.
9 nC
D
D
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
APPLICATIONS • DC/DC Converters / Boost Converters • Load Switch • LED Backlighting in LCD TVs • Power Management for Mobile Computing
G
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche...
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