DatasheetsPDF.com

DP3N10

Developer Microelectronics
Part Number DP3N10
Manufacturer Developer Microelectronics
Description N-Channel MOSFET
Published Dec 17, 2020
Detailed Description DP3N10 N-Channel 100V(D.S)MOSFT MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.126 at VGS = 10 V 3.1 1...
Datasheet PDF File DP3N10 PDF File

DP3N10
DP3N10

Overview
DP3N10 N-Channel 100V(D.
S)MOSFT MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max.
ID (A)a 0.
126 at VGS = 10 V 3.
1 100 0.
134 at VGS = 6 V 2.
9 0.
139 at VGS = 4.
5 V 2.
6 Qg (Typ.
) 2.
9 nC D D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: APPLICATIONS • DC/DC Converters / Boost Converters • Load Switch • LED Backlighting in LCD TVs • Power Management for Mobile Computing G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)