|
Part Number
|
30J126 |
|
Manufacturer
|
Toshiba |
|
Description
|
Silicon N-Channel IGBT |
|
Published
|
Dec 19, 2020 |
|
Datasheet
|
30J126
|
Features
GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS):
High speed: tf = 0.05...
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