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30J126

Toshiba
Part Number 30J126
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Dec 19, 2020
Detailed Description GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fa...
Datasheet PDF File 30J126 PDF File

30J126
30J126

Overview
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): High speed: tf = 0.
05 μs (typ.
) Low switching loss : Eon = 1.
00 mJ (typ.
) : Eoff = 0.
80 mJ (typ.
) • Low saturation voltage: VCE (sat) = 1.
95 V (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms VCES VGES IC ICP PC Tj Tstg 600 V ±20 V 30 A 60 90 W 150 °C −55 to 150 ...


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