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Part Number
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BCP120C |
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Manufacturer
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BEREX |
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Description
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HIGH EFFICIENCY HETEROJUNCTION POWER FET |
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Published
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Dec 23, 2020 |
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Detailed Description
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BCP120C
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
The BeRex BCP120C is a GaAs Power pHEMT with a no...
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Datasheet
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BCP120C
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Overview
BCP120C
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.
25µm x 1200µm)
The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.
25-micron by 1200-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.
5 GHz frequency range are required.
The product may be used in either wideband (6-18 GHz) or narrow-band applications.
The BCP120C is
produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES
• 30.
5 dBm Typical Output Power • 11 dB Typical Gain @ 12 GHz • 0.
25 X 1200 Micron Recessed Gate
APPLICATIONS
• Commercial • Military / Hi-Rel.
• Test & Measurement
ELECTRICAL CHARA...
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