DatasheetsPDF.com

BCP120C

BEREX
Part Number BCP120C
Manufacturer BEREX
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET
Published Dec 23, 2020
Detailed Description BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a no...
Datasheet PDF File BCP120C PDF File

BCP120C
BCP120C

Overview
BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.
25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.
25-micron by 1200-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.
5 GHz frequency range are required.
The product may be used in either wideband (6-18 GHz) or narrow-band applications.
The BCP120C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
PRODUCT FEATURES • 30.
5 dBm Typical Output Power • 11 dB Typical Gain @ 12 GHz • 0.
25 X 1200 Micron Recessed Gate APPLICATIONS • Commercial • Military / Hi-Rel.
• Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C PARAMETER/TEST CONDITIONS TEST FREQ.
P1dB Output Power @ P1dB (Vds = 8V, Id = 180mA) 12 GHZ 18 GHz G1dB Gain @ P1dB (Vds = 8V, Id = 180mA) 12 GHZ 18 GHz PAE PAE @ P1dB (Vds = 8V, Id = 180mA) 12 GHZ 18 GHz Idss Saturated Drain Current (Vgs = 0V, Id = 1.
0V) Gm Transconductance (Vds = 2V, Vgs = 180mA) Vp Pinch-off Voltage (Id = 1.
2mA, Vds = 2V) BVgd Drain Breakdown Voltage (Igd = 1.
2mA, source open) BVgs Source Breakdown Voltage (Ig = 1.
2mA, drain open) Rth Thermal Resistance (Au-Sn Eutectic Attach) MIN.
29.
0 28.
0 9.
5 6.
5 260 -2.
5 TYPICAL 30.
5 29.
5 11.
0 8.
0 60 45 380 470 -1.
2 -15 -13 37 MAX.
500 -12 UNIT dBm dB % mA mS V V V °C/W www.
berex.
com BeRex, Inc.
3350 Scott Blvd.
#6101 Santa Clara 95054 tel.
(408) 452-5595 Specifications are subject to change without notice.
©BeRex 2017 Rev.
1.
1 February 2017 BCP120C MAXIMUM RATING (Ta = 25° C) PARAMETERS Vds Drain-Source Voltage Vgs Gate-Source Voltage Id Drain Current Igsf Forward Gate Current Pin Input Power Tch Channel Temperature Tstg Storage Temperature Pt Total Power Dissipation ABSOLUTE 12V -6V Idss 60 mA 29 dBm 175°C -60°C ~ 150°C 4.
1 W CONTINUOUS 8V -3 V Idss 10 mA @ 3 dB compression 150°C -60°C ~ 150°C 3.
4 W Exceeding any of the above Maximum ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)