isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This
transistor is ideal for audio frequency amplifier and
switching especially in hybrid integrated circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak NOTE1
PC
Collector Power Dissipation @Ta=25℃ NOTE2
TJ
Junction Temperature
7
A
2
W
150
℃
Tstg
Storage Temperature Range
NOTE1:PW≤3...