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Part Number
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HM9N70 |
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Manufacturer
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H&M semi |
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Description
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N-Channel MOSFET |
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Published
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Jan 10, 2021 |
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Detailed Description
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HM9N70
700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET
Features
VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.)@V...
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Datasheet
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HM9N70
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Overview
HM9N70
700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET
Features
VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.
)@VGS=10V
Low Dense Cell Design Reliable and Rugged Advanced trench process technology
Applications
Synchronous Rectification Power Management in Inverter System
Switching Time Test Circuit and Waveforms
Pin Description Pin Description
G D S TO-220 G D S TO-220F
Package Marking and Ordering Information
Device Marking HM9N70
Device HM9N70
Device Package TO-220/F
Reel Size -
Tape width -
Page 1
Shenzhen H&M Semiconductor Co.
Ltd http：//www.
hmsemi.
com
Quantity -
HM9N70
700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET
Key Electrical Characteristics (...
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