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HM9N70

H&M semi
Part Number HM9N70
Manufacturer H&M semi
Description N-Channel MOSFET
Published Jan 10, 2021
Detailed Description HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Features  VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.)@V...
Datasheet PDF File HM9N70 PDF File

HM9N70
HM9N70

Overview
HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Features  VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.
)@VGS=10V  Low Dense Cell Design  Reliable and Rugged  Advanced trench process technology  Applications  Synchronous Rectification  Power Management in Inverter System Switching Time Test Circuit and Waveforms Pin Description Pin Description G D S TO-220 G D S TO-220F Package Marking and Ordering Information Device Marking HM9N70 Device HM9N70 Device Package TO-220/F Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.
Ltd http：//www.
hmsemi.
com Quantity - HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Key Electrical Characteristics (TO-220 package) Parameter Description Min Typ BVDSS, V Drain-to-Source Breakdown Voltage 700 - ID, A Continuous Drain Current - - RDS(on), Ohm Static Drain-to-Source On Resistance - 1,1 VGS(th), V Gate Threshold Voltage 2,0 - IDSS, μA Drain-to-Source Leakage Current - - IGSS,...


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