Transistors
2SC3315
Silicon
NPN epitaxial planar type
For high-frequency amplification
4.
0±0.
2
2.
0±0.
2
Unit: mm
15.
6±0.
5 (0.
8) (0.
8) 3.
0±0.
2 7.
6
■ Features
• Optimum for high-density mounting • Allowing supply with the radial taping
0.
75 max.
• Optimum for RF amplification of FM/AM radios • High transition frequency fT
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e.
d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
15
mA
lifecy , dis Collector power dissipation
PC
300
mW
n u duct typed J...