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C3303

Toshiba
Part Number C3303
Manufacturer Toshiba
Description 2SC3303
Published Oct 30, 2007
Detailed Description 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC ...
Datasheet PDF File C3303 PDF File

C3303
C3303

Overview
2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.
0 μs (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC Collector current IC 5 A Pulse ICP 8 Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 20 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-7J1A temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the Weight: 0.
36 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1989-02 1 2013-11-01 2SC3303 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 100 V, IE = 0 IEBO VEB = 7 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) (Note) VCE = 1 V, IC = 1 A hFE (2) VCE = 1 V, IC = 3 A VCE (sat) IC = 3 A, IB = 0.
15 A VBE (sat) IC = 3 A, IB = 0.
15 A fT VCE = 4 V, IC = 1 A Cob VCB = 10 V, IE ...


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