Power
Transistors
2SC4359
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.
7)
15.
0±0.
3 11.
0±0.
2
Unit: mm 5.
0±0.
2
(3.
2)
• High-speed switching
21.
0±0.
5 15.
0±0.
2
• High collector-base voltage (Emitter open) VCBO
φ 3.
2±0.
1
• Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
16.
2±0.
5 (3.
5)
Solder Dip
2.
0±0.
2 1.
1±0.
1
2.
0±0.
1 0.
6±0.
2
e Collector-base voltage (Emitter open) VCBO
900
V
pe) Collector-emitter voltage (E-B short) VCES
900
V
nc d ge.
ed ty Collector-emitter voltage (Base open) VCEO
800
V
sta tinu Emitter-...