DatasheetsPDF.com

2SC4301

Sanken electric
Part Number 2SC4301
Manufacturer Sanken electric
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regula...
Datasheet PDF File 2SC4301 PDF File

2SC4301
2SC4301

Overview
2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4301 900 800 7 7(Pulse14) 3.
5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.
6A IC=3A, IB=0.
6A VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) 2SC4301 100max 100max 800min 10 to 30 0.
5max 1.
2max 6typ 105typ V V MHz pF Unit External Dimensions FM100(TO3PF) 0.
8±0.
2 15.
6±0.
2 5.
5±0.
2 3.
45 ±0.
2 5.
5 ø3.
3±0.
2 1.
6 µA V 23.
0±0.
3 9.
5±0.
2 µA a b 16.
2 1.
75 2.
15 1.
05 +0.
2 -0.
1 5.
45±0.
1 1.
5 4.
4 5.
45±0.
1 1.
5 0.
65 +0.
2 -0.
1 3.
3 0.
8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
45 IB2 (A) –1.
5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 3.
35 B C E Weight : Approx 6.
5g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) 1A 700m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 7 (V CE =4V) 6 500mA 1 –55˚C ) (Case Temp ase Tem p) V B E (sat) Collector Current I C (A) 6 Collector Current I C (A) mp) 4 300 mA 25˚C (C 4 Temp ) (Cas 125˚C 2 2 12 5 ˚C V C E (sat) 0 0.
02 0.
05 0.
1 0.
5 1 –5 0 25 5˚C 0 1 2 3 4 5 7 0 0 0.
2 0.
4 0.
6 0.
8 –55˚C (C eT (C ˚C 25˚C I B =100mA as (Case emp 125˚C (C ase Tem 200mA emp ase T ) e Te ) p) 1.
0 3.
0 1.
2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 DC C urrent G ain h FE 10 θ j - a (˚C /W ) h FE – I C Characteristics (Typical) 5˚ t on •t stg • t f – I C Characteristics (Typical) t on • ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)