Power
Transistors
2SC4621
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
15.
0±0.
3 11.
0±0.
2
5.
0±0.
2 3.
2
0.
7
q High-speed switching
12.
5 3.
5 15.
0±0.
2
q High collector to base voltage VCBO q Wide area of safe operation (ASO)
φ3.
2±0.
1
q Full-pack package which can be installed to the heat sink with
/ one screw
21.
0±0.
5
2.
0±0.
2
2.
0±0.
1
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
16.
2±0.
5
Solder Dip
n d tage.
ued Collector to base voltage
VCBO
500
V
le s ntin VCES
500
V
a e c co Collector to emitter voltage
cy is VCEO
400
V
n u t life ed, d Emitter to base voltage
VEBO
...