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C4606

Panasonic
Part Number C4606
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm Complementary t...
Datasheet PDF File C4606 PDF File

C4606
C4606

Overview
Transistors 2SC4606 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit: mm Complementary to 2SA1762 6.
9±0.
1 (1.
5) (1.
5) 2.
5±0.
1 (1.
0) (1.
0) (0.
4) ■ Features 4.
5±0.
1 3.
5±0.
1 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 R 0.
7 R 0.
9 W output amplifier • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.
85) 0.
45±0.
05 2.
0±0.
2 4.
1±0.
2 2.
4±0.
2 1.
0±0.
1 /0.
55±0.
1 ■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 1.
25±0.
05 c e.
d ty Collector-base voltage (Emitter open) VCBO 80 V n d stag tinue Collector-emitter voltage (Base open) VCEO 80 V a e cle con Emitter-base voltage (Collector open) VEBO 5 V lifecy , dis Collector current IC 0.
5 A n u duct typed Peak collector current te tin Pro ed Collector power dissipation * ICP 1 A PC 1 W four ntinu Junction temperature Tj 150 °C ing isco Storage temperature Tstg −55 to +150 °C in n follow ed d Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.
7 mm s lan in thickness 3 2 1 (2.
5) (2.
5) a o includetype, p ■ Electrical Characteristics Ta = 25°C ± 3°C c ued nce Parameter Symbol Conditions Min Typ M is ntin tena Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 80 isco ain Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 80 ce/D pe, m Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 D nan e ty Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 ainte nanc Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 130 M inte hFE2 VCE = 5 V, IC = 500 mA 50 100 ma Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA laned Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA (p Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 120 1: Base 2: Colle...


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