Transistors
2SC4691
Silicon
NPN epitaxial planar type
For high-speed switching
Unit: mm
■ Features
• Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and
0.
2+–00.
.
015 3
0.
15+–00.
.
015
0.
8±0.
1 1.
6±0.
15
1˚
automatic insertion through the tape packing
0.
2±0.
1
(0.
4)
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
1
2
(0.
5) (0.
5)
1.
0±0.
1 1.
6±0.
1
5˚
e Collector-base voltage (Emitter open) VCBO
40
V
pe) Collector-emitter voltage (E-B short) VCES
40
V
nc d ge.
ed ty Emitter-base voltage (Collector open) VEBO
5
0 to 0.
1
0.
45±0.
1
(0.
3)
0.
75±0.
15
V
sta tinu Collector current
IC
100
mA
a ...