Transistors
2SC6045
Silicon
NPN epitaxial planar type
For UHF band low noise amplification
Unit: mm
Features
0.
33+–00.
.
0025
0.
10+–00.
.
0025
Low noise figure NF
3
High forward transfer gain |S21e|2
0.
15 min.
0.
80±0.
05 1.
20±0.
05
High transition frequency fT
5°
0.
15 min.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
0.
23+–00.
.
0025
12
(0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05
/ Collector-base voltage (Emitter open)
VCBO
15
V
5°
Collector-emitter voltage (Base open)
e e) Emitter-base voltage (Collector open) c e.
d typ Collector current n d stag tinue Collector power dissipation a e cle con Junction temperature n u t lifecyed, dis Storage temperature
VC...