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C6042

Toshiba Semiconductor
Part Number C6042
Manufacturer Toshiba Semiconductor
Description 2SC6042
Published Sep 6, 2013
Detailed Description 2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Swi...
Datasheet PDF File C6042 PDF File

C6042
C6042

Overview
2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • High-speed switching: tf = 0.
2 μs (max) (IC = 0.
3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 800 800 375 8 1.
0 2.
0 0.
5 1.
0 150 −55 to 150 Unit V V V V A A W °C °C 1.
Base 2.
Collector 3.
Emitter JEDEC JEITA TOSHIBA ― ― 2-7D101A Weight: 0.
2 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating co...


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