isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PD
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
50
A
250
W
-65~200 ℃
Tstg
Storage Temperature Range
-65~200 ℃
2N6274
isc website： www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power Tran...