eGaN® FET DATASHEET
EPC2022 – Enhancement Mode Power
Transistor
VDS , 100 V RDS(on) , 3.
2 mΩ ID , 90 A
D G
S
EPC2022
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
UNIT
Drain-to-Source Voltage (Continuous)
100
VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
120
V
ID
Co...