Part Number
|
VSP007N10MS-G |
Manufacturer
|
Vanguard Semiconductor |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Apr 12, 2021 |
Detailed Description
|
Features
Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-f...
|
Datasheet
|
VSP007N10MS-G
|
Overview
Features
Enhancement mode Low on-resistance RDS(on) @ VGS=4.
5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; RoHS compliant
VSP007N10MS-G
100V/85A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.
5 V ID
100 V
5.
7 mΩ
7.
5 mΩ
85
A
PDFN5x6
Part ID VSP007N10MS-G
Package Type PDFN5x6
Marking 007N10M
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested ①
IDSM
Continuous drain current @VGS=...
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