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VSP007N10MS-G

Vanguard Semiconductor
Part Number VSP007N10MS-G
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Apr 12, 2021
Detailed Description Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-f...
Datasheet PDF File VSP007N10MS-G PDF File

VSP007N10MS-G
VSP007N10MS-G

Overview
Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP007N10MS-G 100V/85A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.
5 V ID 100 V 5.
7 mΩ 7.
5 mΩ 85 A PDFN5x6 Part ID VSP007N10MS-G Package Type PDFN5x6 Marking 007N10M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=...


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