Part Number
|
FDMA410NZT |
Manufacturer
|
ON Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Apr 30, 2021 |
Detailed Description
|
MOSFET – N-Channel, POWERTRENCH), Ultra Thin, 1.5 V
20 V, 9.5 A, 23 mW
FDMA410NZT
Description This Single N−Channel MOSF...
|
Datasheet
|
FDMA410NZT
|
Overview
MOSFET – N-Channel, POWERTRENCH), Ultra Thin, 1.
5 V
20 V, 9.
5 A, 23 mW
FDMA410NZT
Description This Single N−Channel MOSFET has been designed using
onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.
5 V on special MicroFETt leadframe.
This design is similar to the FDMA410NZ, however it features our new advanced 0.
55 mm max 2 x 2 MLP package technology.
Features
• 0.
55 mm max package height MicroFET 2 x 2 mm Package • Max RDS(on) = 23 mW at VGS = 4.
5 V, ID = 9.
5 A • Max RDS(on) = 29 mW at VGS = 2.
5 V, ID = 8.
0 A • Max RDS(on) = 36 mW at VGS = 1.
8 V, ID = 4.
0 A • Max RDS(on) = 60 mW at VGS = 1.
5 V, ID = 2.
0 A • HBM ESD protection level 1.
5 kV (Note 3) • These Devices are...
Similar Datasheet