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FDMA410NZ

Fairchild Semiconductor
Part Number FDMA410NZ
Manufacturer Fairchild Semiconductor
Description Single N-channel MOSFET
Published May 31, 2009
Detailed Description FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET September 2008 FDMA410NZ www.datasheet4u.com tm Singl...
Datasheet PDF File FDMA410NZ PDF File

FDMA410NZ
FDMA410NZ

Overview
FDMA410NZ Single N-Channel 1.
5 V Specified PowerTrench® MOSFET September 2008 FDMA410NZ www.
datasheet4u.
com tm Single N-Channel 1.
5 V Specified PowerTrench MOSFET 20 V, 9.
5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 4.
5 V, ID = 9.
5 A „ Max rDS(on) = 29 mΩ at VGS = 2.
5 V, ID = 8.
0 A „ Max rDS(on) = 36 mΩ at VGS = 1.
8 V, ID = 4.
0 A „ Max rDS(on) = 50 mΩ at VGS = 1.
5 V, ID = 2.
0 A „ HBM ESD protection level > 2.
5 kV (Note 3) „ Low Profile-0.
8 mm maximum in the new package MicroFET 2x2 mm „ RoHS Compliant ® General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.
5 V on special MicroFET leadframe.
Applications „ Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings 20 ±8 9.
5 24 2.
4 0.
9 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 410 Device FDMA410NZ Package MicroFET 2X2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDMA410NZ Rev.
B 1 www.
fairchildsemi.
com FDMA410NZ Single N-Channel 1.
5 V Specified PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V 20 17 1 ±10 V mV/°C µA µA ∆BVDSS Brea...


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