Part Number
|
RJP63F3 |
Manufacturer
|
Renesas |
Description
|
N-Channel IGBT |
Published
|
Jul 28, 2021 |
Detailed Description
|
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• Trench gate and thin wafer technology (G6H se...
|
Datasheet
|
RJP63F3
|
Overview
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
Preliminary Datasheet
R07DS0321EJ0200 Rev.
2.
00
May 26, 2011
C
1 23
Absolute Maximum Ratings
Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1%
2.
Tc...
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