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RJP63K2DPK-M0

Part Number	RJP63K2DPK-M0
Manufacturer	Renesas
Description	N-Channel IGBT
Published	May 2, 2012
Detailed Description	Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching Features     Trench gate and ...
Datasheet	RJP63K2DPK-M0 PDF File

Overview

Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.
9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ.
Low leak current: ICES = 1 A max R07DS0469EJ0200 Rev.
2.
00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector (Flange) E 1 2 3 Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Stora...

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RJP63K2DPK-M0 N-Channel IGBT - Renesas

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