2SK2928 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.040 Ω typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G1042-0400 (Previous: ADE-208-551B) Rev.4.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2928 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value a...

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