Part Number
|
FDMS3606AS |
Manufacturer
|
ON Semiconductor |
Description
|
Asymmetric Dual N-Channel MOSFET |
Published
|
Dec 12, 2021 |
Detailed Description
|
FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
30 V Asymmetric Dual N-Channel MOSFET
Features
...
|
Datasheet
|
FDMS3606AS
|
Overview
FDMS3606AS PowerTrench® Power Stage
FDMS3606AS
PowerTrench® Power Stage
30 V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.
9 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.
8 mΩ at VGS = 4.
5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to e...
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