Part Number
|
EGP10C |
Manufacturer
|
ON Semiconductor |
Description
|
High-Efficiency Rectifier |
Published
|
Jan 11, 2022 |
Detailed Description
|
DATA SHEET www.onsemi.com
Rectifier, High Efficiency, Glass Passivated, 1.0 A
EGP10B - EGP10K
Features
Superfast Re...
|
Datasheet
|
EGP10C
|
Overview
DATA SHEET www.
onsemi.
com
Rectifier, High Efficiency, Glass Passivated, 1.
0 A
EGP10B - EGP10K
Features
Superfast Recovery Time for High Efficiency Low Forward Voltage, High Current Capability Low Leakage Current High Surge Current Capability
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol
Parameter
Value
Unit
IO If(surge)
Average Rectified Current 0.
375” lead length @ TL = 75_C
Peak Forward Surge Current 8.
3 ms single half−sine−wave Superimposed on rated load (JEDEC method)
1.
0
A
30
A
PD Total Device Dissipation Derate above 25_C
2.
5
W
17
mWC
IC
Thermal Resistance, Junction to Ambient
50
TJ, TSTG Junction and Storage Temperature Range −65~15...
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