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EGP10A

Vishay Siliconix
Part Number EGP10A
Manufacturer Vishay Siliconix
Description Glass Passivated Ultrafast Rectifier
Published Jan 4, 2012
Detailed Description Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor Glass...
Datasheet PDF File EGP10A PDF File

EGP10A
EGP10A


Overview
Not for New Designs EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.
vishay.
com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER® DO-41 (DO-204AL) FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max.
Package 1.
0 A 50 V, 100 V, 150 V, 200 V, 300 V, 400 V 30 A 50 ns 0.
95 V, 1.
25 V 150 °C DO-41 (DO-204AL) Circuit configuration Single TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication.
MECHANICAL DATA Case: DO-41 (DO-204AL), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B Maximum repetitive peak reverse voltage Maximum RMS voltage VRRM 50 100 VRMS 35 70 Maximum DC blocking voltage Maximum average forward rectified current 0.
375" (9.
5 mm) lead length at TA = 55 °C Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load VDC 50 100 IF(AV) IFSM Operating junction and storage temperature range TJ, TSTG EGP10C 150 105 150 EGP10D 200 140 200 1.
0 30 -65 to +150 EGP10F 300 210 300 EGP10G 400 280 400 UNIT V V V A A °C Revision: 06-Oct-2021 1 Document Number: 88582 For technical questions within your region: DiodesAmericas@vishay.
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