FQB5N90

FQB5N90 — N-Channel QFET® MOSFET FQB5N90 N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω Features • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, Description ID = 2.7 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ...