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FQB5N50C

Fairchild Semiconductor
Part Number FQB5N50C
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 4, 2007
Detailed Description FQB5N50C — N-Channel QFET® MOSFET FQB5N50C N-Channel QFET® MOSFET 500 V, 5 A, 1.4 Ω November 2013 Features • 5 A, 500...
Datasheet PDF File FQB5N50C PDF File

FQB5N50C
FQB5N50C

Overview
FQB5N50C — N-Channel QFET® MOSFET FQB5N50C N-Channel QFET® MOSFET 500 V, 5 A, 1.
4 Ω November 2013 Features • 5 A, 500 V, RDS(on) = 1.
4 Ω (Max.
) @ VGS = 10 V, ID = 2.
5 A • Low Gate Charge (Typ.
18 nC) • Low Crss (Typ.
15 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S FQB5N50CTM 500 5 2.
9 20 ± 30 300 5 7.
3 4.
5 73 0.
58 -55 to +150 300 FQB5N50CTM 1.
71 62.
5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W ©2003 Fairchild Semiconductor Corporation 1 FQB5N50C Rev.
C1 www.
fairchildsemi.
com FQB5N50C — N-Channel QFET® MOSFET Package Marking and Ordering Information Device Marking FQB5N50C Device FQB5N50CTM Package D2-PAK Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol Parameter Test Conditions Min Off ...


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