Part Number
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NVCR4LS2D8N08M7A |
Manufacturer
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ON Semiconductor |
Description
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N-Channel MOSFET |
Published
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Jun 28, 2022 |
Detailed Description
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DATA SHEET www.onsemi.com
MOSFET – Power, N-Channel
80 V, 2.8 mW
NVCR4LS2D8N08M7A
Features
• Typical RDS(on) = 2.2 mW ...
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Datasheet
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NVCR4LS2D8N08M7A
|
Overview
DATA SHEET www.
onsemi.
com
MOSFET – Power, N-Channel
80 V, 2.
8 mW
NVCR4LS2D8N08M7A
Features
• Typical RDS(on) = 2.
2 mW at VGS = 10 V • Typical Qg(tot) = 86 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2162
4953 × 2413 4933 ±15 × 2393 ±15 4748.
7 × 2184.
6 427.
1 × 549.
5 101.
6 ±19.
1
ORDERING INFORMATION
Device NVCR4LS2D8N08M7A
Package
Wafer Sawn on Foil
RECOMMENDED STORAGE CONDITIONS
Temperature RH
22 to 28°C 40 to ...
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