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NVCR4LS2D8N08M7A

ON Semiconductor
Part Number NVCR4LS2D8N08M7A
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jun 28, 2022
Detailed Description DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 2.8 mW NVCR4LS2D8N08M7A Features • Typical RDS(on) = 2.2 mW ...
Datasheet PDF File NVCR4LS2D8N08M7A PDF File

NVCR4LS2D8N08M7A
NVCR4LS2D8N08M7A

Overview
DATA SHEET www.
onsemi.
com MOSFET – Power, N-Channel 80 V, 2.
8 mW NVCR4LS2D8N08M7A Features • Typical RDS(on) = 2.
2 mW at VGS = 10 V • Typical Qg(tot) = 86 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2162 4953 × 2413 4933 ±15 × 2393 ±15 4748.
7 × 2184.
6 427.
1 × 549.
5 101.
6 ±19.
1 ORDERING INFORMATION Device NVCR4LS2D8N08M7A Package Wafer Sawn on Foil RECOMMENDED STORAGE CONDITIONS Temperature RH 22 to 28°C 40 to 66% The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C.
Symbol Parameter Condition Min Typ Max Unit BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 − − V IDSS Drain to Source Leakage Current VDS = 80 V, VGS = 0 V − − 1 mA IGSS G...


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