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3DD155

Part Number 3DD155
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ I...
Features RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage I...
Published Sep 11, 2022
Datasheet 3DD155 PDF File




Features
RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO VCE(sat) VBE(sat) ICEO ICBO hFE Emitter-Base B...






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