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3DD155

Part Number	3DD155
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 11, 2022
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltag...
Datasheet	3DD155 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.
0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE A 80 B 150 VCBO Collector-Base Voltage C 200 D 250 E 350 F 400 A 50 B 100 VCEO Collector-Emitter Voltage C 150 D 200 E 250 F 300 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 2 PC Collector Power Dissipation @TC=75℃ 20 TJ Junction Temperature 175 Tstg...

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