Digital FET, P-Channel
FDV304P, FDV304P-F169
General Description This P−Channel enhancement mode field effect
transistors is
produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on−state resistance at low gate drive conditions.
This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
This device has excellent on−state resistance even at gate drive voltages as low as 2.
5 V.
Features
• −25 V, −0.
46 A Continuous, −1.
5 A Peak
♦ RDS(on) = 1.
1 W @ VGS = −4.
5 V ♦ RDS(on) = 1.
5 W @ VGS = −2.
7 V
• Very Low Level Gate Drive Requirements Allowing Direct
Op...