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FDV304P-F169

ON Semiconductor
Part Number FDV304P-F169
Manufacturer ON Semiconductor
Description P-Channel Digital FET
Published Jan 23, 2023
Detailed Description Digital FET, P-Channel FDV304P, FDV304P-F169 General Description This P−Channel enhancement mode field effect transist...
Datasheet PDF File FDV304P-F169 PDF File

FDV304P-F169
FDV304P-F169

Overview
Digital FET, P-Channel FDV304P, FDV304P-F169 General Description This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on−state resistance at low gate drive conditions.
This device is designed especially for application in battery power applications such as notebook computers and cellular phones.
This device has excellent on−state resistance even at gate drive voltages as low as 2.
5 V.
Features • −25 V, −0.
46 A Continuous, −1.
5 A Peak ♦ RDS(on) = 1.
1 W @ VGS = −4.
5 V ♦ RDS(on) = 1.
5 W @ VGS = −2.
7 V • Very Low Level Gate Drive Requirements Allowing Direct Op...


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