Part Number
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FDS4435BZ-F085 |
Manufacturer
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ON Semiconductor |
Description
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P-Channel Power MOSFET |
Published
|
Jan 24, 2023 |
Detailed Description
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FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
FDS4435BZ-F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
...
|
Datasheet
|
FDS4435BZ-F085
|
Overview
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
FDS4435BZ-F085
P-Channel PowerTrench® MOSFET
-30V, -8.
8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.
8A Max rDS(on) = 35m: at VGS = -4.
5V, ID = -6.
7A
Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.
8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability
Termination is Lead-free and RoHS compliant Qualified to AEC Q101
General Description
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well su...
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