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FDS4435BZ-F085

ON Semiconductor
Part Number FDS4435BZ-F085
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Jan 24, 2023
Detailed Description FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ ...
Datasheet PDF File FDS4435BZ-F085 PDF File

FDS4435BZ-F085
FDS4435BZ-F085

Overview
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET -30V, -8.
8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.
8A „ Max rDS(on) = 35m: at VGS = -4.
5V, ID = -6.
7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.
8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant Qualified to AEC Q101 General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well su...


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