MOSFET – P-Channel, POWERTRENCH) -150 V, -0.
8 A, 1.
2 W FDN86265P General Description This P−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.
Features • Max rDS(on) = 1.
2 W at VGS = –10 V, ID = −0.
8 A Max rDS(on) = 1.
4 W at VGS = –6 V, ID = −0.
7 A • Very Low RDS−on Mid Voltage P−Channel Silicon Technology Optimised for Low Qg • This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Applications • Active Clamp Switch • Load Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless ...

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