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FDN86265P

ON Semiconductor
Part Number FDN86265P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Jan 24, 2023
Detailed Description MOSFET – P-Channel, POWERTRENCH) -150 V, -0.8 A, 1.2 W FDN86265P General Description This P−Channel MOSFET is produced ...
Datasheet PDF File FDN86265P PDF File

FDN86265P
FDN86265P

Overview
MOSFET – P-Channel, POWERTRENCH) -150 V, -0.
8 A, 1.
2 W FDN86265P General Description This P−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.
Features • Max rDS(on) = 1.
2 W at VGS = –10 V, ID = −0.
8 A Max rDS(on) = 1.
4 W at VGS = –6 V, ID = −0.
7 A • Very Low RDS−on Mid Voltage P−Channel Silicon Technology Optimised for Low Qg • This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Applications • Active Clamp Switch • Load Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed –150 V ±25 V A –0.
8 –5 EAS Single Pulse Avalanche Energy (Note 3) 6 mJ PD Power Dissipation (Note 1a) (Note 1b) W 1.
5 0.
6 ...


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