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Part Number
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SCTWA40N120G2AG |
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Manufacturer
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STMicroelectronics |
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Description
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Automotive-grade silicon carbide Power MOSFET |
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Published
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Mar 1, 2023 |
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Detailed Description
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SCTWA40N120G2AG
Datasheet
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads...
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Datasheet
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SCTWA40N120G2AG
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Overview
SCTWA40N120G2AG
Datasheet
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ.
, 33 A in an HiP247 long leads package
Features
Order code SCTWA40N120G2AG
VDS 1200 V
RDS(on) max.
105 mΩ
ID 33 A
HiP247 long leads
D(2, TAB)
G(1)
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C)
Applications
• Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC)
Description
S(3)
This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology.
The ...
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