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SCTWA40N120G2AG

STMicroelectronics
Part Number SCTWA40N120G2AG
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Mar 1, 2023
Detailed Description SCTWA40N120G2AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads...
Datasheet PDF File SCTWA40N120G2AG PDF File

SCTWA40N120G2AG
SCTWA40N120G2AG

Overview
SCTWA40N120G2AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ.
, 33 A in an HiP247 long leads package Features Order code SCTWA40N120G2AG VDS 1200 V RDS(on) max.
105 mΩ ID 33 A HiP247 long leads D(2, TAB) G(1) • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology.
The device features remarkably low on-resistance per unit area and very good switching performance.
The variation of switching loss is almost independent of junction temperature.
Product status link SCTWA40N120G2AG Product summary Order code SCTWA40N120G2AG Marking SCT40N120G2AG Package HiP247 long leads Packing Tube DS13594 - Rev 4 - November 2021 For further information contact your local STMicroelectronics sales office.
www.
st.
com SCTWA40N120G2AG Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source voltage (pulsed, tp = 25 ns repetitive overshoot during switching for an accumulated time of 10 h) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width limited by safe operating area.
Symbol RthJC RthJA Table 2.
Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Value Unit 1200 V -10 to 22 -5 to 18 V -11 to 25 33 A 25 100 A 290 W °C -55 to 200 °C Value ...


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