PD55035STR1-E
Datasheet
35 W, 12.
5 V, HF to 1 GHz RF power LDMOS
transistor
1
3
2
PowerSO-10RF (straight lead)
Pin connection
Pin
Connection
1
Drain
2
Source
3
Gate
Features
Order code
Frequency
VDD
PD55035STR1-E
500 MHz
12.
5 V
• Excellent thermal stability • Common source configuration • POUT = 35 W with 16.
9 dB at 500 MHz, 12.
5 V • New RF plastic package
POUT 35 W
Gain 16.
9 dB
Efficiency 62%
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies of up to 1 GHz.
The device b...