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PD55035STR1-E

Part Number	PD55035STR1-E
Manufacturer	STMicroelectronics
Description	RF power LDMOS transistor
Published	Mar 5, 2023
Detailed Description	PD55035STR1-E Datasheet 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin ...
Datasheet	PD55035STR1-E PDF File

Overview

PD55035STR1-E Datasheet 35 W, 12.
5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin connection Pin Connection 1 Drain 2 Source 3 Gate Features Order code Frequency VDD PD55035STR1-E 500 MHz 12.
5 V • Excellent thermal stability • Common source configuration • POUT = 35 W with 16.
9 dB at 500 MHz, 12.
5 V • New RF plastic package POUT 35 W Gain 16.
9 dB Efficiency 62% Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 12 V in common source mode at frequencies of up to 1 GHz.
The device b...

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PD55035STR1-E RF power LDMOS transistor - STMicroelectronics

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