RF3L05150CB4
Datasheet
150 W, 28/32 V, HF to 1 GHz RF power LDMOS
transistor
1 2
5
4
LBB
3
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
Source (bottom side)
4
Gate B
5
Gate A
Features
Order code RF3L05150CB4
Frequency 520 MHz
VDD 28 V
POUT 150 W
Gain 23 dB
Efficiency 60 %
• High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C
operation • In compliance with the european directive 2002/95/EC
Applications
• 2-30 MHz HF or short wave communication • 30-88 MHz ground communication • 118-140 MHz Avionics • 136-174 MHz commercial ground communication • 30-512 MHz Jammer, ...