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RF3L05150CB4

Part Number	RF3L05150CB4
Manufacturer	STMicroelectronics
Description	RF power LDMOS transistor
Published	Mar 14, 2023
Detailed Description	RF3L05150CB4 Datasheet 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Co...
Datasheet	RF3L05150CB4 PDF File

Overview

RF3L05150CB4 Datasheet 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 % • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Applications • 2-30 MHz HF or short wave communication • 30-88 MHz ground communication • 118-140 MHz Avionics • 136-174 MHz commercial ground communication • 30-512 MHz Jammer, ...

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RF3L05150CB4 RF power LDMOS transistor - STMicroelectronics

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