| Part Number | CG2H40025 |
| Manufacturer | MACOM |
| Title | RF Power GaN HEMT |
| Description | The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offer... |
| Features |
• Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.0 GHz • 30 W typical PSAT • 70% Efficiency at PSAT • 28 V Operation Applications • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers... |
| File Size | 1.24MB |
| Datasheet |
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CG2H40025 : CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. PPNa: cCkGa2gHe4T0y0p2e5: 4P4a0n1d96CGa2ndH4404002156F6 FEATURES • Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.0 GHz • 30 W typical P.
CG2H40025 : Wolfspeed’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill package. PNs: CG2H40025P and CG2H40025F Package Types: 440196 and 440166 Features • Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.0 GHz • 30 W typical PSAT • 70% Efficiency at PSAT • .