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CG2H40025

CREE
Part Number CG2H40025
Manufacturer CREE
Description RF Power GaN HEMT
Published May 24, 2019
Detailed Description CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility tr...
Datasheet PDF File CG2H40025 PDF File

CG2H40025
CG2H40025

Overview
CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and compressed amplifier circuits.
The transistor is available in a screw-down, flange package and solder-down, pill packages.
PPNa: cCkGa2gHe4T0y0p2e5: 4P4a0n1d96CGa2ndH4404002156F6 FEATURES • Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.
0 GHz • 15 dB Small Signal Gain at 4.
0 GHz • 30 W typical PSAT • 70 % Efficiency at PSAT • 28 V Operation APPLICATIONS • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 2.
0 – November 2018 Subje...


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